smbta 06 oct-14-1999 1 npn silicon af transistor ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary type: smbta 56 (pnp) 1 2 3 vps05161 type marking pin configuration package smbta 06 s1g 1=b 2=e 3=c sot-23 maximum ratings parameter value symbol unit collector-emitter voltage v v ceo 80 collector-base voltage v cbo 80 emitter-base voltage v ebo 4 ma i c 500 dc collector current peak collector current 1 i cm a 100 i b base current ma peak base current i bm 200 total power dissipation , t s = 79 c p tot 330 mw 150 c junction temperature t j storage temperature t st g -65 ... 150 thermal resistance k/w junction ambient 1) r thja 285 junction - soldering point r thjs 215 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
smbta 06 oct-14-1999 2 electrical characteristics parameter values symbol unit max. typ. min. dc characteristics v collector-emitter breakdown voltage i c = 1 ma, i b = 0 80 - - v (br)ceo v (br)cbo 80 collector-base breakdown voltage i c = 100 a, i b = 0 - - emitter-base breakdown voltage i e = 10 a, i c = 0 - - 4 v (br)ebo na collector cutoff current v cb = 80 v, i e = 0 i cbo 100 - - 20 collector cutoff current v cb = 80 v, i e = 0 , t a = 150 c a - - i cbo - 100 na collector cutoff current v ce = 60 v, i b = 0 - i ceo dc current gain 1) i c = 10 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 100 100 - - - - - collector-emitter saturation voltage1) i c = 100 ma, i b = 10 ma v cesat - - 1.25 v base-emitter voltage 1) i c = 100 ma, v ce = 1 v v be(on) - - 1.2 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 12 - pf 1) pulse test: t 300 s, d = 2%
smbta 06 oct-14-1999 3 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00814 150 50 100 ?c t a s t 100 200 300 mw 400 p tot t t ; as collector current i c = f ( v be ) v ce = 1v ehp00815 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 c 25 c -50 c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00816 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t 5 transition frequency f t = f ( i c ) v ce = 5v 10 ehp00817 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55
smbta 06 oct-14-1999 4 base-emitter saturation voltage i c = f (v besat ), h fe = 10 ehp00818 10 0 v besat 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 ? c 25 ? c -50 ? c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.0 10 ehp00819 cesat v 0 3 10 c ma 1 10 2 10 c 5 5 100 25 c -50 c 0.1 0.2 0.3 0.4 0.5 0.6 v 0.8 dc current gain h fe = f ( i c ) v ce = 1v ehp00821 10 h c fe 10 1 10 -1 0 100 c 25 c -50 c 1 10 2 10 3 10 ma 2 10 3 10 0 10 collector cutoff current i cbo = f ( t a ) v cb = 80v ehp00820 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3
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